Data Sheet PU10515EJ01V0DS

4

2SC5011

Frequency f (GHz)

MAXIMUM AVAILABLE GAIN/INSERTION

POWER GAIN vs. FREQUENCY

INSERTION POWER GAIN

vs. COLLECTOR CURRENT

NOISE FIGURE vs.

COLLECTOR CURRENT

0.1

50

0

10

0.5

1.0

5.0

10

f = 20 mA

20

30

40

MAG

1

20

0

10

5

10

50

100

f = 1 GHz

5

4

1

3

0

1

2

5

10

50

100

f = 1 GHz

Remark The graphs indicate nominal characteristics.

S-PARAMETERS

S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form

(S2P) that enables direct import to a microwave circuit simulator without keyboard input.

Click here to download S-parameters.

[RF and Microwave]

→ [Device Parameters]

URL http://www.ncsd.necel.com/