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DCR2880B60 Datasheet(PDF) 7 Page - Dynex Semiconductor |
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DCR2880B60 Datasheet(HTML) 7 Page - Dynex Semiconductor |
7 / 10 page SEMICONDUCTOR DCR2880B65 7/10 www.dynexsemi.com Fig.10 Multi-cycle surge current Fig.11 Single-cycle surge current Fig.10 Reverse recovery charge Fig.11 Reverse recovery current 0 5,000 10,000 15,000 20,000 25,000 30,000 35,000 40,000 0 5 10 15 20 25 30 Rate of decay of on-state current, di/dt - (A/us) QS min = 3539.7*(di/dt) 0.5991 QS max = 7066.1*(di/dt) 0.4891 Conditions: Tj = 125 oC VRpeak ~ 3900V, VRM ~ 2600V snubber as apprpriate to control reverse volts 0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 Rate of decay of on-state current, di/dt - (A/us) IRR min = 41.906*(di/dt) 0.8147 IRR max = 59.812*(di/dt) 0.7589 Conditions: Tj = 125 oC VRpeak ~ 3900V, VRM ~ 2600V snubber as apprpriate to control reverse volts |
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