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DCR3030V30 Datasheet(PDF) 6 Page - Dynex Semiconductor |
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DCR3030V30 Datasheet(HTML) 6 Page - Dynex Semiconductor |
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6 / 10 page  SEMICONDUCTOR DCR3030V42 6/10 www.dynexsemi.com 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 2000 4000 6000 8000 Mean on-state current, IT(AV) - (A) d.c. 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 4000 5000 6000 Mean on-state current, IT(AV) - (A) d.c. 180 120 90 60 30 Fig.7 Maximum permissible case temperature, double side cooled – rectangular wave Fig.8 Maximum permissible heatsink temperature, double side cooled – rectangular wave 0 2 4 6 8 10 12 14 16 18 20 0.001 0.01 0.1 1 10 100 Time ( s ) Double Side Cooling Anode Side Cooling Cathode Sided Cooling 1 2 3 4 Double side cooled Ri (°C/kW) 0.9206 1.8299 3.4022 1.3044 Ti (s) 0.0076807 0.0579454 0.4078613 1.2085 Anode side cooled Ri (°C/kW) 0.9032 1.6719 3.0101 7.4269 Ti (s) 0.0075871 0.0536531 0.3144537 5.624 Cathode side cooled Ri (°C/kW) 0.9478 2.0661 1.6884 13.0847 Ti (s) 0.0078442 0.0645541 0.3894389 4.1447 Zth = [Ri x ( 1-exp. (t/ti))] [1] R th(j-c) Conduction Tables show the increments of thermal resistance Rth(j-c) when the device operates at conduction angles other than d.c. Double side cooling Anode Side Cooling Cathode Sided Cooling Zth (z) Zth (z) Zth (z) ° sine. rect. ° sine. rect. ° sine. rect. 180 1.34 0.88 180 1.34 0.88 180 1.33 0.88 120 1.57 1.30 120 1.57 1.30 120 1.57 1.29 90 1.83 1.54 90 1.84 1.54 90 1.83 1.53 60 2.08 1.81 60 2.08 1.81 60 2.07 1.80 30 2.27 2.11 30 2.28 2.11 30 2.26 2.10 15 2.36 2.28 15 2.37 2.28 15 2.35 2.26 Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW) |
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