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DCR6650H38 Datasheet(PDF) 3 Page - Dynex Semiconductor

Part # DCR6650H38
Description  Phase Control Thyristor
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

DCR6650H38 Datasheet(HTML) 3 Page - Dynex Semiconductor

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SEMICONDUCTOR
DCR6650H42
3/10
www.dynexsemi.com
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Max.
Units
IRRM/IDRM
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125°C
-
600
mA
dV/dt
Max. linear rate of rise of off-state voltage
To 67% VDRM, Tj = 125°C, gate open
-
2000
V/µs
dI/dt
Rate of rise of on-state current
From 67% VDRM to 2x IT(AV)
Repetitive 50Hz
-
200
A/µs
Gate source 30V, 10
,
Non-repetitive
-
500
A/µs
tr < 0.5µs, Tj = 125°C
VT(TO)
Threshold voltage
– Low level
500 to 4000A at Tcase = 125°C
-
0.775
V
Threshold voltage
– High level
4000 to 8000A at Tcase = 125°C
-
0.977
V
rT
On-state slope resistance
– Low level
500A to 4000A at Tcase = 125°C
-
0.124
m
On-state slope resistance
– High level
4000A to 8000A at Tcase = 125°C
-
0.076
m
tgd
Delay time
VD = 67% VDRM, gate source 30V, 10
-
3
µs
tr = 0.5µs, Tj = 25°C
tq
Turn-off time
IT = 3000A, Tj = 125°C,
VR = 200V, dI/dt = 1A/µs,
700
µs
dVDR/dt = 20V/µs linear
QS
Stored charge
IT = 3000A, Tj = 125°C, dI/dt – 1A/µs,
VRpeak ~2520V, VR ~ 1680V
2800
6760
µC
IRR
Reverse recovery current
42
70
A
IL
Latching current
Tj = 25°C, VD = 5V
-
3
A
IH
Holding current
Tj = 25°C, RG-K = , ITM = 500A, IT = 5A
-
300
mA


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