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LDTDG12GPLT1G Datasheet(PDF) 1 Page - Leshan Radio Company |
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LDTDG12GPLT1G Datasheet(HTML) 1 Page - Leshan Radio Company |
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1 / 3 page  Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping Q7 1 22 3000/Tape & Reel LESHAN RADIO COMPANY, LTD. 1/3 • 10000/Tape & Reel We declare that the material of product compliance with RoHS requirements. LDTDG12GPLT1G LDTDG12GPLT1G LDTDG12GPLT3G Q7 1 22 Absolute maximum ratings (Ta=25 °C) Electrical characteristics (Ta=25 °C) 3 COLLECTOR 2 EMITTER 1 BASE Applications Driver Features 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L- load (an inductive load). Structure NPN epitaxial planar silicon transistor (with built-in resistor and zener diode) R R =10kΩ R1 Parameter VCBO VCEO PC Tj 60 ±10 V V A °C 60 ±10 VEBO V 5 1 IC W ICP 2 0.5 2 ∗1 ∗2 150 Tstg °C −55 to +150 Symbol Limits Unit Collector-base voltage Collector-emitter voltage Collector current Collector power dissipation Junction temperature Emitter-base voltage Storage temperature ∗1 Pw≤10ms, Duty cycle≤1/2 ∗2 When mounted on a 40 ×40×0.7 mm ceramic board. A Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT R Min. 50 50 5 − 300 300 −− − 7 − − − − − − 80 10 70 70 − 0.5 580 − 0.4 − ∗ 13 VIC =50µA IC =1mA IE =720µA VCB =40V VEB =4V VCE =2V, IC=500mA IC/IB =500mA/5mA VCE =5V, IE=−0.1A, f=30MHz − V V µA µA − V MHz k Ω Typ. Max. Unit Conditions ∗ Characteristics of built-in transistor Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Emitter-base resistance 1 2 3 SOT-23 |
Similar Part No. - LDTDG12GPLT1G_15 |
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Similar Description - LDTDG12GPLT1G_15 |
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