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DFM900NXM45-F000 Datasheet(PDF) 3 Page - Dynex Semiconductor |
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DFM900NXM45-F000 Datasheet(HTML) 3 Page - Dynex Semiconductor |
3 / 6 page DFM900NXM45-F000 3/6 www.dynexsemi.com STATIC ELECTRICAL CHARACTERISTICS – PER ARM Tcase = 25°C unless stated otherwise. Symbol Parameter Test Conditions Min Typ Max Units IRM Peak reverse current VR = 4500V, Tj = 125°C 90 mA VF Forward voltage IF = 900A 3.0 V IF = 900A, Tj = 125°C 3.1 V LM Inductance - 30 nH DYNAMIC ELECTRICAL CHARACTERISTICS – PER ARM Tcase = 25°C unless stated otherwise Symbol Parameter Test Conditions Min Typ. Max Units Qrr Reverse recovery charge IF = 900A VR =2250V dIF/dt = 4500A/μs 700 μC Irr Peak reverse recovery current 1000 A Erec Reverse recovery energy 900 mJ Tcase = 125°C unless stated otherwise Symbol Parameter Test Conditions Min Typ. Max Units Qrr Reverse recovery charge IF = 900A VR = 2250V dIF/dt = 4500A/μs 1300 μC Irr Peak reverse recovery current 1200 A Erec Reverse recovery energy 1600 mJ |
Similar Part No. - DFM900NXM45-F000_15 |
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Similar Description - DFM900NXM45-F000_15 |
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