DIM400DCM17-A000

2/8

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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ABSOLUTE MAXIMUM RATINGS

Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In

extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.

Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect

device reliability.

Symbol

Parameter

Test Conditions

Max.

Units

Collector-emitter voltage

1700

V

Gate-emitter voltage

±20

V

Continuous collector current

400

A

Peak collector current

800

A

Max. transistor power dissipation

3470

W

I

Diode I

30

kA

Diode I

120

kA

Isolation voltage

– per module

Commoned terminals to base plate.

AC RMS, 1 min, 50Hz

4000

V

Partial discharge

– per module

10

pC

THERMAL AND MECHANICAL RATINGS

Internal insulation material:

AlN

Baseplate material:

AlSiC

Creepage distance:

20mm

Clearance:

10mm

CTI (Comparative Tracking Index):

350

Symbol

Parameter

Test Conditions

Min

Typ.

Max

Units

Thermal resistance

– transistor (per arm)

Continuous dissipation

–

junction to case

-

-

36

°C/kW

Thermal resistance

– diode (IGBT arm)

Continuous dissipation

–

junction to case

-

-

80

°C/kW

Thermal resistance

– diode (Diode arm)

40

°C/kW

Thermal resistance

– case to heatsink

(per module)

Mounting torque 5Nm

(with mounting grease)

-

-

8

°C/kW

Junction temperature

Transistor

-

-

150

°C

Diode

-

-

125

°C

Storage temperature range

-

-40

-

125

°C

Screw torque

Mounting

– M6

-

-

5

Nm

Electrical connections

– M4

-

-

2

Nm

Electrical connections

– M8

-

-

10

Nm