DIM800DCS12-A000_15 datasheet(3/8 Pages) DYNEX

Part #	DIM800DCS12-A000

Description	IGBT Chopper Module

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Manufacturer	DYNEX [Dynex Semiconductor]

Direct Link	http://www.dynexsemi.com

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DIM800DCS12-A000

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures

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ELECTRICAL CHARACTERISTICS

Tcase = 25°C unless stated otherwise.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

ICES

Collector cut-off current

VGE = 0V, VCE = VCES

1

mA

VGE = 0V, VCE = VCES, Tcase = 125°C

25

mA

IGES

Gate leakage current

VGE = ± 20V, VCE = 0V

4

μA

VGE(TH)

Gate threshold voltage

IC = 40mA, VGE = VCE

4.5

5.5

6.5

V

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15V, IC = 800A

2.2

2.8

V

VGE = 15V, IC = 800A, TVJ = 125°C

2.6

3.2

V

IF

Diode forward current

DC

800

A

IFM

Diode maximum forward current

tp = 1ms

1600

A

VF

Diode forward voltage

(IGBT arm)

IF = 800A

2.1

2.4

V

Diode forward voltage

(Diode arm)

1.8

2.1

V

Diode forward voltage

(IGBT arm)

IF = 800A, TVJ = 125°C

2.1

2.4

V

Diode forward voltage

(Diode arm)

1.7

2.0

V

Cies

Input capacitance

VCE = 25V, VGE = 0V, f = 1MHz

90

nF

Qg

Gate charge

±15V

9

μC

Cres

Reverse transfer capacitance

VCE = 25V, VGE = 0V, f = 1MHz

nF

LM

Module inductance

– per arm

20

nH

RINT

Internal transistor resistance

–

per arm

270

μ



SCData

Short circuit current, ISC

Tj = 125°C, VCC = 900V

tp ≤ 10μs, VGE ≤ 15V

VCE (max) = VCES – L

* x dI/dt

IEC 60747-9

4500

A

Note:

* L is the circuit inductance + L

M

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