DIM800FSS12-A000

Single Switch IGBT Module

Replaces DS5867-2

DS5867-3 July 2014 (LN31763)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures

www.dynexsemi.com

FEATURES



10µs Short Circuit Withstand



Non Punch Through Silicon





Lead Free construction

APPLICATIONS



High Reliability Inverters



Motor Controllers



Traction Drives

The Powerline range of high power modules includes

half bridge, chopper, dual, single and bi-directional

switch configurations covering voltages from 1200V to

6500V and currents up to 2400A.

The DIM800FSS12-A000 is a single switch 1200V,

n-channel enhancement mode, insulated gate bipolar

transistor (IGBT) module. The IGBT has a wide

reverse bias safe operating area (RBSOA) plus 10μs

short circuit withstand.

The module incorporates an electrically isolated base

plate and low inductance construction enabling circuit

designers to optimise circuit layouts and utilise

ORDERING INFORMATION

Order As:

DIM800FSS12-A000

Note: When ordering, please use the complete part

number

KEY PARAMETERS

1200V

2.2V

(max)

800A

(max)

1600A

* Measured at the power busbars, not the auxiliary terminals

Fig. 1 Circuit configuration

Outline type code: F

(See Fig. 11 for further information)

Fig. 2 Package

9(G)

8(E)

3(E)

7(C)

4(E)

2(C)

1(C)