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DRD1010F56 Datasheet(PDF) 4 Page - Dynex Semiconductor |
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DRD1010F56 Datasheet(HTML) 4 Page - Dynex Semiconductor |
4 / 7 page SEMICONDUCTOR DRD1010F60 4/7 www.dynexsemi.com CHARACTERISTICS Symbol Parameter Test Conditions Min. Max. Units VFM Forward voltage At 3400A peak, Tcase = 25°C - 2.1 V IRM Peak reverse current At VDRM, Tcase = 150°C - 75 mA QS Total stored charge IF = 2000A, dIRR/dt =3A/µs - 4500 µC Irr Peak reverse recovery current Tcase = 150°C, VR =100V - 120 A VTO Threshold voltage At Tvj = 150°C - 1.0 V rT Slope resistance At Tvj = 150°C - 0.42 m CURVES Fig.2 Maximum (limit) on-state characteristics Fig.3 Dissipation curves VTM EQUATION Where A = 0.819645 B = -0.13673 VTM = A + Bln (IT) + C.IT+D.IT C = 5.73x10 -5 D = 0.042435 these values are valid for Tj = 150 °C for IF 500A to 5000A 0 1000 2000 3000 4000 0 500 1000 1500 2000 2500 Mean forward current I F(AV) - (A) dc 1/2 wave 3 phase sq. 6 phase sq. 12 phase sq. |
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