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DRD2690Y48 Datasheet(PDF) 5 Page - Dynex Semiconductor |
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DRD2690Y48 Datasheet(HTML) 5 Page - Dynex Semiconductor |
5 / 7 page - 5 - SEMICONDUCTOR DRD2690Y50 5/7 www.dynexsemi.com Fig.4 Total stored charge Fig.5 Maximum reverse recovery current Fig.6 Maximum (limit) transient thermal impedance- junction to case 0 5000 10000 15000 20000 25000 0 50 100 150 Rate of decay of forward current, di F/dt - (A/us) Conditions: I F = 2000A V R = 100V T j = 150 oC Q S max = 4789.7*(di/dt) 0.3197 Q S min = 2771.5*(di/dt) 0.3717 0 200 400 600 800 1000 1200 1400 0 50 100 150 Rate of decay of forward current, d IF/dt - (A/us) Conditions: I F = 2000A V R = 100V T j = 150 oC I RR max = 81.792*(di/dt) 0.5963 I RR min = 50.733*(di/dt) 0.6536 |
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