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DRD3390V37 Datasheet(PDF) 4 Page - Dynex Semiconductor |
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DRD3390V37 Datasheet(HTML) 4 Page - Dynex Semiconductor |
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4 / 7 page  SEMICONDUCTOR DRD3390V40 4/7 www.dynexsemi.com CHARACTERISTICS Symbol Parameter Test Conditions Min. Max. Units VFM Forward voltage At 3000A peak, Tcase = 25°C - 1.15 V IRM Peak reverse current At VDRM, Tcase = 150°C - 250 mA QS Total stored charge IF = 2000A, dIRR/dt =3A/µs - 5000 µC Irr Peak reverse recovery current Tcase = 150°C, VR =100V - 150 A VTO Threshold voltage At Tvj = 150°C - 0.75 V rT Slope resistance At Tvj = 150°C - 0.118 m CURVES Fig.2 Maximum (limit) on-state characteristics Fig.3 Dissipation curves VTM EQUATION Where A = - 0.15357 B = 0.177571 VTM = A + Bln (IT) + C.IT+D.IT C = 0.000179 D = - 0.01294 these values are valid for Tj = 150°C for IF 500A to 5000A 0 2000 4000 6000 8000 10000 0 2000 4000 6000 8000 Mean forward current I F(AV)- (A) dc 1/2 wave 3 phase sq. 6 phase sq. |
Similar Part No. - DRD3390V37 |
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Similar Description - DRD3390V37 |
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