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KTC3210 Datasheet(PDF) 1 Page - KEC(Korea Electronics) |
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KTC3210 Datasheet(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 2 page  1999. 9. 10 1/2 SEMICONDUCTOR TECHNICAL DATA KTC3210 EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 0 HIGH CURRENT APPLICATION. FEATURES Complementary to KTA1282. MAXIMUM RATING (Ta=25 ) TO-92 DIM MILLIMETERS A B C D F G H J K L 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 MAX 2.30 D 1 2 3 B K G H F F E C E N 0.45 MAX M 1.00 N 1. EMITTER 2. COLLECTOR 3. BASE +_ ELECTRICAL CHARACTERISTICS (Ta=25 ) Note : hFE Classification 0:100 200, Y:160 320 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Collector Current IC 2 A Emitter Current IE -2 A Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=30V, IE=0 - - 100 nA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 30 - - V Emitter-Base Breakdown Voltage V(BR)EBO IC=1mA, IC=0 5 - - V DC Current Gain hFE (Note) VCE=2V, IC=500mA 100 - 320 Collector-Emitter Saturation Voltage VCE(sat) IC=1.5A, IB=0.03A - - 2.0 V Base-Emitter Voltage VBE VCE=2V, IC=500mA - - 1.0 V Transition Frequency fT VCE=2V, IC=500mA - 120 - MHz Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 13 - pF |
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