V8PAN50-M3

www.vishay.com

Vishay General Semiconductor

Revision: 28-Jan-15

1

Document Number: 87911

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Surface Mount Trench MOS Barrier Schottky Rectifier

FEATURES

• Very low profile - typical height of 0.95 mm

• Ideal for automated placement

• Trench MOS Schottky technology

• Low power losses, high efficiency

• Low forward voltage drop

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• Material categorization: for definitions of compliance

TYPICAL APPLICATIONS

For

use

in

low

voltage,

high

frequency

inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

MECHANICAL DATA

Case: DO-221BC (SMPA)



Molding compound meets UL 94 V-0 flammability rating

Base

P/N-M3

-

halogen-free,

RoHS-compliant,

and

commercial grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD22-B102



M3 suffix meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

Notes

PRIMARY CHARACTERISTICS

8.0 A

50 V

120 A

0.41 V

150 °C

Package

DO-221BC (SMPA)

Diode variation

Single die

DO-221BC (SMPA)

TMBS

Top View

Bottom View

PARAMETER

SYMBOL

V8PAN50

UNIT

Device marking code

8N5

Maximum repetitive peak reverse voltage

50

V

Maximum DC forward current

8.0

A

3.7

Maximum DC reverse voltage

35

V

Peak forward surge current 8.3 ms single half sine-wave



superimposed on rated load

120

A

Operating junction and storage temperature range

-40 to +150

°C