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HAF2017(L) Datasheet(PDF) 7 Page - Renesas Technology Corp |
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HAF2017(L) Datasheet(HTML) 7 Page - Renesas Technology Corp |
7 / 11 page HAF2017(L), HAF2017(S) Rev.2.00, Apr.13.2004, page 5 of 8 100 80 60 40 20 -25 0 25 50 75 100 125 150 0 VGS = 4.5 V ID = 20 A ID = 20 A Pulse Test Case Temperature Tc ( °C) Static Drain to Source on State Resistance vs. Temperature VGS = 10 V 10 A 10 A 5 A 5 A 100 10 0.1 0.01 1 0.01 0.1 1 10 100 Tc = -25 °C 25 °C 75 °C Drain Current ID (A) Forward Transfer Admittance vs. Drain Current VDS = 10 V Pulse Teat 0.1 1 10 30 3 0.3 100 1000 200 500 100 20 10 50 Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time 0.1 1 10 3 0.3 30 100 r t 100 20 50 10 2 5 1 V = 5 V, V = 30 V PW = 300 µs, duty < 1 % GS DD t f d(on) t d(off) t Drain Current ID (A) Switching Characteristics 50 40 30 20 10 0 0.4 0.8 1.2 1.6 2.0 VGS = 0 V 5 V 10 V Source to Drain Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage Pulse Test 10000 1000 100 10 010 20 30 40 60 50 VGS = 0 f = 1 MHz Coss Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage di / dt = 50 A / µs V = 0, Ta = 25 °C GS |
Similar Part No. - HAF2017(L)_15 |
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Similar Description - HAF2017(L)_15 |
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