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KTD1624 Datasheet(PDF) 1 Page - KEC(Korea Electronics)

Part No. KTD1624
Description  EPITAXIAL PLANAR NPN TRANSISTOR
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Maker  KEC [KEC(Korea Electronics)]
Homepage  http://www.keccorp.com
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2001. 12. 6
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTD1624
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 4
VOLTAGE REGULATORS, RELAY DRIVERS
LAMP DRIVERS, ELECTRICAL EQUIPMENT
FEATURES
Adoption of MBIT processes.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Large current capacity and wide ASO.
Complementary to KTB1124.
MAXIMUM RATING (Ta=25 )
DIM
A
B
D
E
G
H
K
4.70 MAX
2.50 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
SOT-89
C
J
G
D
12
3
2. COLLECTOR (HEAT SINK)
A
C
K
F
MILLIMETERS
H
1. BASE
3. EMITTER
FF
D
+_
+_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : hFE (1) Classification A:100 200, B:140 280, C:200 400
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
60
V
Vollector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
3
A
Collector Current(Pulse)
ICP
6
A
Collector Power Dissipation
PC
500
mW
PC*
1
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT.
Collector Cut-off Current
ICBO
VCB=40V, IE=0
-
-
1
Emitter Cut-off Current
IEBO
VEB=4V, IC=0
-
-
1
DC Current Gain
hFE(1) (Note) VCE=2V, IC=100
100
-
400
hFE (2)
VCE=2V, IC=3A
35
-
-
Collector-Emitter Saturation Voltage
VCE(sat)
IC=2A, IB=100
-
0.19
0.5
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=2A, IB=100
-
0.94
1.2
V
Transition Frequency
fT
VCE=10V, IC=50
-
150
-
Collector Output Capacitance
Cob
VCB=10V, f=1 , IE=0
-
25
-
Switching
Time
Turn-on Time
ton
IB2
470
Āµ
25
-5V
25V
10I 1=-10I
=I =1A
B
B2
C
100
Āµ
50
VR
I B1
PW=20
Āµs
DC 1%
R8
INPUT
<
=
-
70
-
nS
Storage Time
tstg
-
650
-
Fall Time
tf
-
35
-
* : Package mounted on ceramic substrate(250mm2 0.8t)
Type Name
h
Rank
FE
Lot No.
Marking




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