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KTD1824 Datasheet(PDF) 1 Page - KEC(Korea Electronics)

Part No. KTD1824
Description  EPITAXIAL PLANAR NPN TRANSISTOR (FOR LOW-FREQUENCY AMPLIFICATION)
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Maker  KEC [KEC(Korea Electronics)]
Homepage  http://www.keccorp.com
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2001. 11. 29
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTD1824
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
FOR LOW-FREQUENCY AMPLIFICATION.
FEATURES
High foward current transfer ratio hFE.
Low collector to emitter saturation voltage VCE(sat).
High emitter to base voltage VEBO.
Low noise voltage NV.
USM type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
MAXIMUM RATINGS (Ta=25 )
DIM
MILLIMETERS
A
B
D
E
1. EMITTER
2. BASE
3. COLLECTOR
USM
2.00 0.20
1.25 0.15
0.90 0.10
0.3+0.10/-0.05
2.10 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
C
G
H
J
K
L
K
1
3
2
E
B
D
H
MM
N
N
M
0.42 0.10
N
0.10 MIN
+_
+_
+_
+_
+_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=20V, IE=0
-
-
100
nA
ICEO
VCE=20V, IB=0
-
-
1
A
Collector-Base Breakdown Voltage
V(BR)CBO
IC=10 A, IE=0
50
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, IB=0
40
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE=10 A, IC=0
15
V
DC Current Gain
hFE (Note)
VCE=10V, IC=2mA
400
1000
2000
Collector-Emitter Saturation Voltage
VCE(sat)
IC=10mA, IB=1mA
-
0.05
0.2
V
Transition Frequency
fT
VCB=10V, IE=-2mA, f=200MHz
-
120
-
MHz
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
15
V
Collector Current
DC
IC
50
mA
Pulse
ICP
100
Collector Power Dissipation
PC
100
mW
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 150
h
Rank
Type Name
Marking
L
FE
Note : hFE Classification
A:400~800, B:600~1200, C:1000~2000




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