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KTD1882 Datasheet(PDF) 1 Page - KEC(Korea Electronics) |
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KTD1882 Datasheet(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 2 page  2000. 12. 8 1/2 SEMICONDUCTOR TECHNICAL DATA KTD1882 EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 0 AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING FEATURES Complementary to KTB1772. MAXIMUM RATING (Ta=25 ) TO-92 DIM MILLIMETERS A B C D F G H J K L 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 MAX 2.30 D 1 2 3 B K G H F F E C E N 0.45 MAX M 1.00 N 1. EMITTER 2. COLLECTOR 3. BASE +_ ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=30V, IE=0 - - 1 A Emitter-Cut-off Current IEBO VEB=3V, IC=0 - - 1 A DC Current Gain * hFE(1) VCE=2V, IC=20mA 30 150 - hFE(2) (Note) VCE=2V, IC=1A 100 160 400 Collector-Emitter Saturation Voltage * VCE(sat) IC=2A, IB=0.2A - 0.3 0.5 V Base-Emitter Saturation Voltage * VBE(sat) IC=2V, IB=0.2A - 1.0 2.0 V Current Gain Bandwidth Product fT VCE=5V, IC=0.1A - 90 - MHz Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 45 - pF CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Collector Current DC IC 3 A Pulse (Note) ICP 7 Base Current (DC) IB 0.6 A Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : Pulse Width 10mS, Duty Cycle 50%. * Pulse Test : Pulse Width 350 S, Duty Cycle 2% Pulsed Note: hFE(2) Classification O:100 200 , Y:160 320 , GR:200 400 |
Similar Part No. - KTD1882 |
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Similar Description - KTD1882 |
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