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KTD545 Datasheet(PDF) 1 Page - KEC(Korea Electronics)

Part No. KTD545
Description  EPITAXIAL PLANAR NPN TRANSISTOR (LOW FREQUENCY POWER AMP, ELECTRONIC GOVERNOR)
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Maker  KEC [KEC(Korea Electronics)]
Homepage  http://www.keccorp.com
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1999. 8. 7
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTD545
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
LOW FREQUENCY POWER AMP, CONVERTER
ELECTRONIC GOVERNOR APPLICATIONS
FEATURES
Low Saturation Voltage
: VCE(sat)=0.3V(Max.) at IC=0.5A.
Complementary to KTB598.
MAXIMUM RATING (Ta=25 )
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1
2
3
B
K
G
H
F
F
E
C
E
N
0.45 MAX
M
1.00
N
1. EMITTER
2. COLLECTOR
3. BASE
+_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
1
A
Collector Power Dissipation
PC
625
mW
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=20V, IE=0
-
-
0.1
A
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
-
-
0.1
A
DC Current Gain
hFE(1) (Note)
VCE=2V, IC=50mA
70
-
400
hFE(2)
VCE=2V, IC=1A(Pulse)
30
-
-
Collector-Emitter Saturation Voltage
VCE(sat)
IC=500mA, IB=50mA
-
0.1
0.3
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=500mA, IB=50mA
-
0.85
1.2
V
Transition Frequency
fT
VCE=10V, IC=50mA
-
180
-
MHz
Collector Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
-
15
-
pF
Note : hFE Classification O:70 140, Y:120 240, GR:200 400




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