Electronic Components Datasheet Search |
|
1N5817 Datasheet(PDF) 1 Page - Vishay Siliconix |
|
1N5817 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page 1N5817, 1N5818, 1N5819 www.vishay.com Vishay General Semiconductor Revision: 13-Aug-13 1 Document Number: 88525 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Schottky Barrier Plastic Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. MECHANICAL DATA Case: DO-204AL (DO-41) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes the cathode end Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 20 V, 30 V, 40 V IFSM 25 A VF 0.45 V, 0.55 V, 0.60 V TJ max. 125 °C Package DO-204AL Diode variations Single DO-204AL (DO-41) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL 1N5817 1N5818 1N5819 UNIT Maximum repetitive peak reverse voltage VRRM 20 30 40 V Maximum RMS voltage VRMS 14 21 28 V Maximum DC blocking voltage VDC 20 30 40 V Maximum non-repetitive peak reverse voltage VRSM 24 36 48 V Maximum average forward rectified current at 0.375" (9.5 mm) lead length at TL = 90 °C IF(AV) 1.0 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 25 A Voltage rate of change (rated VR) dV/dt 10 000 V/μs Operating junction and storage temperature range TJ, TSTG - 65 to + 125 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL 1N5817 1N5818 1N5819 UNIT Maximum instantaneous forward voltage 1.0 VF (1) 0.450 0.550 0.600 V Maximum instantaneous forward voltage 3.1 VF (1) 0.750 0.875 0.900 V Maximum average reverse current at rated DC blocking voltage TA = 25 °C IR (1) 1.0 mA TA = 100 °C 10 Typical junction capacitance 4.0 V, 1.0 MHz CJ 125 110 pF |
Similar Part No. - 1N5817_15 |
|
Similar Description - 1N5817_15 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |