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MJD112L Datasheet(PDF) 1 Page - KEC(Korea Electronics)

Part # MJD112L
Description  EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
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Manufacturer  KEC [KEC(Korea Electronics)]
Direct Link  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

MJD112L Datasheet(HTML) 1 Page - KEC(Korea Electronics)

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2003. 3. 27
1/2
SEMICONDUCTOR
TECHNICAL DATA
MJD112/L
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 4
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES
High DC Current Gain.
: hFE=1000(Min.),
VCE=4V, IC=1A.
Low Collector-Emitter Saturation Voltage.
Straight Lead (IPAK, "L" Suffix)
Complementary to MJD117/L.
MAXIMUM RATING (Ta=25 )
DPAK
DIM
MILLIMETERS
A
B
C
D
F
H
I
J
K
L
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
2.70 0.2
2.30 0.1
1.00 MAX
2.30 0.2
0.5 0.1
2.00 0.20
0.50 0.10
E
0.91 0.10
M
0.90 0.1
O
A
C
I
J
H
F
F
P
L
12
3
1. BASE
2. COLLECTOR
3. EMITTER
1.00 0.10
P
0.95 MAX
Q
+_
+_
+_
+_
+_
+_
+_
+_
+_
+_
+_
+_
+_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Emitter Sustaining Voltage
VCEO(SUS)
IC=30mA, IB=0
100
-
-
V
Collector Cut-off Current
ICEO
VCE=50V, IB=0
-
-
20
A
ICBO
VCB=100V, IE=0
-
-
20
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
-
-
2
mA
DC Current Gain
hFE
VCE=3V, IC=0.5A
500
-
-
VCE=3V, IC=2A
1,000
12,000
-
Collector-Emitter Saturation Voltage
VCE(sat)
IC=2A, IB=8mA
-
-
2.0
V
Base-Emitter On Voltage
VBE(ON)
VCE=3V, IC=2A
-
-
2.8
V
Current Gain Bandwidth Product
fT
VCE=10V, IC=0.75A, f=1MHz
25
-
-
MHz
Collector Output Capacitance
Cob
VCB=10V, IE=0, f=0.1MHz
-
-
100
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
DC
IC
2
A
Pulse
4
Base Current
DC
IB
50
mA
Collector Power
Dissipation
Ta=25
PC
1.0
W
Tc=25
20
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 150
C
B
E
R
10kΩ
0.6kΩ
R
1
2
=
=
DIM
MILLIMETERS
IPAK
H
F
F
C
A
P
L
I
J
123
A
B
C
D
E
F
G
H
I
J
L
P
Q
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
0.5 0.1
0.50 0.1
1.0 0.1
0.90 MAX
G
1. BASE
2. COLLECTOR
3. EMITTER
K
2.0 0.2
+_
+_
+_
+_
+_
+_
+_
+_
+_
+_
+_
+_


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