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TN1163 Datasheet(PDF) 7 Page - STMicroelectronics |
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TN1163 Datasheet(HTML) 7 Page - STMicroelectronics |
7 / 21 page DocID025707 Rev 2 7/21 TN1163 Package description 20 2 Package description 2.1 Overview ST WLCSP packages are manufactured with a wafer level process by attaching solder balls on I/Os pads of the active wafer side, thus allowing bumped dice to be produced. The I/O contacts can be either configured as a matrix or located in the periphery. A redistribution layer is used. Lead-free balls are manufactured using SAC (SnAgCu) alloy with a near-eutectic melting point ranging 217 to 221 °C. This material makes the package compatible with standard reflow processes. The ball diameter allows to use pick-and-place process compatible with existing equipment, in particular with equipment used for ball grid array (BGA) packages. It also makes it compatible with the PCB design rules used for standard ICs. The devices available in WLCSP are delivered in tape and reel packing with the bumps turned down (placed on the bottom of the carrier tape cavity). The other face of the device is flat and allows picking it as for standard SMD packages. Caution: WLCSP must be handled with care as active silicon substrate is not protected against aggressive mechanical actions. Vacuum plastic pick-up tools are recommended for device handling. WLCSP Devices are 100 % electrically tested after assembly. The device references are marked on the top flat side of the device (see Figure 1). Figure 1. WLCSP top and bump views |
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