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VBT3045BP Datasheet(PDF) 1 Page - Vishay Siliconix |
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VBT3045BP Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page VBT3045BP www.vishay.com Vishay General Semiconductor Revision: 13-Mar-12 1 Document Number: 89449 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C •TJ 200 °C max. in solar bypass application • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed.2 bypass diode thermal test PRIMARY CHARACTERISTCS IF(DC) 30 A VRRM 45 V IFSM 200 A VF at IF = 30 A 0.51 V TOP max. (AC mode) 150 °C TJ max. (DC forward current) 200 °C TMBS® TO-263AB 1 2 K PIN 1 PIN 2 K HEATSINK MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VBT3045BP UNIT Maximum repetitive peak reverse voltage VRRM 45 V Maximum DC forward bypassing current (fig. 1) IF(DC) (1) 30 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 200 A Operating junction temperature range (AC mode) TOP - 40 to + 150 °C Junction temperature in DC forward current without reverse bias, t 1 h TJ (2) 200 °C |
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