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GAL20V8B-20QPI Datasheet(PDF) 1 Page - Lattice Semiconductor |
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GAL20V8B-20QPI Datasheet(HTML) 1 Page - Lattice Semiconductor |
1 / 23 page GAL20V8 High Performance E2CMOS PLD Generic Array Logic™ 1 228 I I I I I I NC NC I/O/Q I/O/Q I/O/Q I/O/Q I/O/Q I/O/Q 4 5 7 9 11 12 14 16 18 19 21 23 25 26 PLCC 1 12 13 24 I/CLK I I I I I I I I I I GND Vcc I I/O/Q I/O/Q I/O/Q I/O/Q I/O/Q I/O/Q I/O/Q I/O/Q I I/OE 6 18 GAL20V8 Top View GAL 20V8 DIP CLK I I I/O/Q I/O/Q I/O/Q I/O/Q I/O/Q I/O/Q I/O/Q I/O/Q I I I I I I I I I I I/OE I/CLK OE 8 8 8 8 8 8 8 8 OLMC OLMC OLMC OLMC OLMC OLMC OLMC IMUX IMUX OLMC Copyright © 2000 Lattice Semiconductor Corp. All brand or product names are trademarks or registered trademarks of their respective holders. The specifications and information herein are subject to change without notice. LATTICE SEMICONDUCTOR CORP., 5555 Northeast Moore Ct., Hillsboro, Oregon 97124, U.S.A. August 2000 Tel. (503) 268-8000; 1-800-LATTICE; FAX (503) 268-8556; http://www.latticesemi.com 20v8_04 Features • HIGH PERFORMANCE E2CMOS® TECHNOLOGY — 5 ns Maximum Propagation Delay — Fmax = 166 MHz — 4 ns Maximum from Clock Input to Data Output — UltraMOS® Advanced CMOS Technology • 50% to 75% REDUCTION IN POWER FROM BIPOLAR — 75mA Typ Icc on Low Power Device — 45mA Typ Icc on Quarter Power Device • ACTIVE PULL-UPS ON ALL PINS • E2 CELL TECHNOLOGY — Reconfigurable Logic — Reprogrammable Cells — 100% Tested/100% Yields — High Speed Electrical Erasure (<100ms) — 20 Year Data Retention • EIGHT OUTPUT LOGIC MACROCELLS — Maximum Flexibility for Complex Logic Designs — Programmable Output Polarity — Also Emulates 24-pin PAL® Devices with Full Function/ Fuse Map/Parametric Compatibility • PRELOAD AND POWER-ON RESET OF ALL REGISTERS — 100% Functional Testability • APPLICATIONS INCLUDE: — DMA Control — State Machine Control — High Speed Graphics Processing — Standard Logic Speed Upgrade • ELECTRONIC SIGNATURE FOR IDENTIFICATION Description The GAL20V8C, at 5ns maximum propagation delay time, com- bines a high performance CMOS process with Electrically Eras- able (E2) floating gate technology to provide the highest speed performance available in the PLD market. High speed erase times (<100ms) allow the devices to be reprogrammed quickly and ef- ficiently. The generic architecture provides maximum design flexibility by allowing the Output Logic Macrocell (OLMC) to be configured by the user. An important subset of the many architecture configura- tions possible with the GAL20V8 are the PAL architectures listed in the table of the macrocell description section. GAL20V8 devices are capable of emulating any of these PAL architectures with full function/fuse map/parametric compatibility. Unique test circuitry and reprogrammable cells allow complete AC, DC, and functional testing during manufacture. As a result, Lattice Semiconductor delivers 100% field programmability and function- ality of all GAL products. In addition, 100 erase/write cycles and data retention in excess of 20 years are specified. Functional Block Diagram Pin Configuration |
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