BAS81, BAS82, BAS83

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Vishay Semiconductors

Rev. 1.9, 16-May-12

2

Document Number: 85509

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 1 - Max. Reverse Power Dissipation vs.

Junction Temperature

Fig. 2 - Reverse Current vs. Junction Temperature

Fig. 3 - Forward Current vs. Forward Voltage

Fig. 4 - Diode Capacitance vs. Reverse Voltage

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

330

mV

410

mV

1000

mV

Reserve current

200

nA

Diode capacitance

1.6

pF

0

2

4

6

8

10

12

14

25

50

75

100

125

150

T

15794

V

R

- Limit at 100 %

P

P

0.1

100

1000

25

50

75

100

125

150

1

10

15795

0

0.5

1

1.5

2.0

15796

T

T

0.1

1

10

100

1000

0.01

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.1

1

10

100

V

15797

f = 1 MHz