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SD103AWS-HG3-08 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SD103AWS-HG3-08 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page SD103AWS-G, SD103BWS-G, SD103CWS-G www.vishay.com Vishay Semiconductors Rev. 1.4, 21-Nov-13 1 Document Number: 81142 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Schottky Diodes MECHANICAL DATA Case: SOD-323 Weight: approx. 4.0 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box FEATURES • The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications • Other applications are click suppression, efficient full wave bridges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems • For general purpose applications • AEC-Q101 qualified available • Base P/N-G3 - green, commercial grade • Base P/N-HG3 - green, AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Note (1) Valid provided that electrodes are kept at ambient temperature Note (1) Valid provided that electrodes are kept at ambient temperature PARTS TABLE PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS SD103AWS-G SD103AWS-G3-08 or SD103AWS-G3-18 Single diode Z6 Tape and reel SD103AWS-HG3-08 or SD103AWS-HG3-18 SD103BWS-G SD103BWS-G3-08 or SD103BWS-G3-18 Single diode Z7 SD103BWS-HG3-08 or SD103BWS-HG3-18 SD103CWS-G SD103CWS-G3-08 or SD103CWS-G3-18 Single diode Z8 SD101CWS-HG3-08 or SD101CWS-HG3-18 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT Repetitive peak reverse voltage SD103AWS-G VRRM 40 V SD103BWS-G VRRM 30 V SD103CWS-G VRRM 20 V Forward continuous current (1) IF 350 mA Single cycle surge 10 μs square wave IFSM 2A Power dissipation (1) Ptot 200 mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air (1) RthJA 500 K/W Junction temperature Tj 125 °C Operating temperature range Top -55 to +125 °C Storage temperature range Tstg -55 to +150 °C |
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