BAV21W-G datasheet(1/5 Pages) TSC

Part #	BAV21W-G

Description	High Voltage Fast Switching Diode

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Manufacturer	TSC [Taiwan Semiconductor Company, Ltd]

Direct Link	http://www.taiwansemi.com

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CREAT BY ART

- Fast switching device(trr<50ns)

- Surface mount device type

- Moisture sensitivity level 1

- Low reverse leakage

- Pb free and RoHS compliant

- Case: Bend lead SOD-123 small outline plastic package

- Polarity: Indicated by cathode band

- Weight: 10.5 ± 0.5 mg

V

mW

mA

A

oC/W

oC

UNIT

VR=100V

VR=150V

VR=200V

pF

(Note)

ns

Document Number: DS_S1404017

Version: C14

VALUE

500

400

Note: Test condition: IF= IR= 30mA , RL=100Ω , IRR=3mA

trr

Cj

VR = 0 , f = 1.0 MHz

200

BAV19W-G

UNIT

IF = 100 mA

PARAMETER

SYMBOL

Power dissipation

Non-repetitive peak forward surge

current

Forward voltage

VF

@ tp=1.0ms; TA=25

℃

BAV20W-G

BAV21W-G

BAV20W-G

BAV21W-G

VBR

Junction and Storage temperature range

PD

IF = 200 mA

IR

-

2.5

PARAMETER

BAV19W-G

Repetitive peak forward current

IFM

per MIL-STD-202, Method 208 guaranteed

- High temperature soldering guaranteed: 260°C/10s

MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted)

Reverse voltage

VR

IO

Peak reverse voltage

Average rectified output current

BAV19W-G

BAV20W-G

BAV21W-G

100

V

IFSM

-65 to +150

120

200

TJ , TSTG

µA

Reverse leakage current

Junction capacitance

-

IR=100

μA

Reverse voltage

SYMBOL

Reverse Recovery Time

BAV19W-G/BAV20W-G/BAV21W-G

High Voltage Fast Switching Diode

SOD-123

- Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

- Terminal: Matte tin plated, lead free, solderable

Small Signal Product

250

Taiwan Semiconductor

FEATURES

150

200

-

Thermal Resistance (Junction to Ambient)

250

V

MECHANICAL DATA

-

0.1

-

1.00

1.25

-

5.0

50

VRM

120

200

250

MIN

MAX

RθJA

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BAV21W-G Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

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