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BAV99-B0RFG Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # BAV99-B0RFG
Description  225mW SMD Switching Diode
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

BAV99-B0RFG Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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- Fast switching speed
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Pb free and RoHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
- Case: SOT-23 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260
oC/10s
- Weight: 0.008grams (approximately)
SYMBOL
UNIT
PD
mW
VRRM
V
IFRM
mA
IO
mA
RθJA
oC/W
TJ , TSTG
oC
SYMBOL
UNIT
V(BR)
V
IR
µA
pF
pF
trr
ns
Document Number: DS_S1404011
2
Junction capacitance
BAW56, BAV70
VR = 0 V,
f = 1 MHz
BAV99
CJ
IF = 150 mA
VR = 70 V
225mW SMD Switching Diode
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted)
Pulse Width=1 µsec
Reverse revovery time
IF = IR = 10 mA, RL = 100 Ω, IRR = 1 mA
Reverse breakdown voltage
IR = 100 µA
IF = 50 mA
-
2.50
1.5
6
70
-
-
-
1.25
-
-
- 55 to + 150
MAX
1.00
MIN
-
556
PARAMETER
VF
Forward voltage
IFSM
450
BAW56, BAV70, BAV99
FEATURES
MECHANICAL DATA
Small Signal Product
Taiwan Semiconductor
SOT-23
VALUE
70
2
0.5
Mean forward current
200
Power dissipation
Repetitive peak forward current
Non-repetitive peak forward
surge current
Version: H14
Pulse Width=1 sec
225
Reverse leakage current
A
Peak repetitive reverse voltage
Junction and storage temperature range
PARAMETER
Thermal resistance form junction to ambient
V


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