V20120C-E3, VF20120C-E3, VB20120C-E3, VI20120C-E3

www.vishay.com

Vishay General Semiconductor

Revision: 11-Sep-13

3

Document Number: 89040

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Characteristics Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

Fig. 6 - Typical Transient Thermal Impedance Per Diode

Fig. 7 - Typical Transient Thermal Impedance Per Diode

Instantaneous Forward Voltage (V)

0

0.2

0.4

0.8

1.2

1.6

100

10

1

0.1

T

T

T

T

0.6

1.0

1.4

10

20

30

40

50

60

70

80

90

100

1

0.1

0.01

0.001

100

10

Percent of Rated Peak Reverse Voltage (%)

T

T

T

T

10

1000

10 000

0.1

1

10

100

Reverse Voltage (V)

T

f = 1.0 MHz

V

100

10

1

0.01

0.1

1

10

100

t - Pulse Duration (s)

Junction to Case

V(B,I)20120C

10

1

0.1

0.01

0.1

1

10

100

t - Pulse Duration (s)

VF20120C

Junction to Case