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VIT10200C-E3 Datasheet(PDF) 3 Page - Vishay Siliconix |
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VIT10200C-E3 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 6 page VT10200C-E3, VFT10200C-E3, VBT10200C-E3, VIT10200C-E3 www.vishay.com Vishay General Semiconductor Revision: 09-Sep-13 3 Document Number: 89177 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Device Instantaneous Forward Voltage (V) 0 0.2 0.4 0.8 1.2 1.6 100 10 0.1 0.6 1.0 1 1.4 T A = 150 °C T A = 125 °C T A = 25 °C T A = 100 °C 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) 0.1 0.01 0.001 0.0001 10 1 T A = 150 °C T A = 125 °C T A = 25 °C T A = 100 °C 1000 0.1 1 10 100 Reverse Voltage (V) 10 100 T J = 25 °C f = 1.0 MHz V sig = 50 mVp-p 10 1 0.01 0.1 1 10 100 t - Pulse Duration (s) V(B,I)T10200C Junction to Case VFT10200C |
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