VS-10TQ035SPbF, VS-10TQ045SPbF

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Vishay Semiconductors

Revision: 21-May-14

1

Document Number: 94121

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

High Performance Schottky Rectifier, 10 A

FEATURES

• Low forward voltage drop

• High frequency operation

• High

purity,

high

temperature

epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

• Guard ring for enhanced ruggedness and

long term reliability

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• AEC-Q101 qualified

• Material categorization: for definitions of compliance

DESCRIPTION

The VS-10TQ...SPbF Schottky rectifier series has been

optimized for low reverse leakage at high temperature. The

proprietary barrier technology allows for reliable operation

up to 175 °C junction temperature. Typical applications are

in switching power supplies, converters, freewheeling

diodes, and reverse battery protection.

PRODUCT SUMMARY

Package

10 A

35 V, 40 V, 45 V

0.57 V

15 mA at 125 °C

175 °C

Diode variation

Single die

13 mJ

Anode

1

3

Base

cathode

2

N/C

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

Rectangular waveform

10

A

35/45

V

1050

A

0.49

V

Range

-55 to +175

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

VS-10TQ035SPbF

VS-10TQ045SPbF

UNITS

Maximum DC reverse voltage

35

45

V

Maximum working peak reverse voltage

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current



See fig. 5

10

A

Maximum peak one cycle



non-repetitive surge current



See fig. 7

5 μs sine or 3 μs rect. pulse

Following any rated load

condition and with rated

1050

A

10 ms sine or 6 ms rect. pulse

280

Non-repetitive avalanche energy

13

mJ

Repetitive avalanche current

Current decaying linearly to zero in 1 μs



2A