V20DM120C-M3, V20DM120CHM3

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Vishay General Semiconductor

Revision: 06-Feb-15

1

Document Number: 89989

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Dual Trench MOS Barrier Schottky Rectifier

FEATURES

• Trench MOS Schottky technology

• Very low profile - typical height of 1.7 mm

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• AEC-Q101 qualified available:



- Automotive ordering code: base P/NHM3

• Material categorization: for definitions of compliance

TYPICAL APPLICATIONS

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection in commercial, inductrial, and

automotive application.

MECHANICAL DATA

Case: TO-263AC SMPD



Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant



Base

P/NHM3

-

halogen-free,

RoHS-compliant,

and

AEC-Q101 qualified

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



M3 and HM3 suffix meets JESD 201 class 2 whisker test

Polarity: As marked

PRIMARY CHARACTERISTICS

2 x 10 A

120 V

120 A

0.65 V

150 °C

Package

TO-263AC (SMPD)

Diode variations

Dual common cathode

V20DM120C

Top View

Bottom View

PIN 1

K

HEATSINK

PIN 2

K

1

2

TMBS

TO-263AC (SMPD)

PARAMETER

SYMBOL

V20DM120C

UNIT

Maximum repetitive peak reverse voltage

120

V

Maximum average forward rectified current



(fig. 1)

per device

20

A

per diode

10

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

120

A

dV/dt

10 000

V/μs

Operating junction and storage temperature range

-40 to +150

°C