VS-10MQ100-M3

www.vishay.com

Vishay Semiconductors

Revision: 20-Jan-15

1

Document Number: 93365

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

High Performance Schottky Rectifier, 1 A

FEATURES

• Low forward voltage drop

• Guard ring for enhanced ruggedness and long

term reliability

• Small foot print, surface mountable

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• Material categorization: for definitions of compliance

DESCRIPTION

The VS-10MQ100-M3 surface mount Schottky rectifier has

been designed for applications requiring low forward drop

and very small foot prints on PC boards. Typical

applications are in disk drives, switching power supplies,

converters, freewheeling diodes, battery charging, and

reverse battery protection.

PRODUCT SUMMARY

Package

DO-214AC (SMA)

1 A

100 V

0.63 V

1 mA at 125 °C

150 °C

Diode variation

Single die

1.0 mJ

Cathode

Anode

DO-214AC (SMA)

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

Rectangular waveform

1

A

100

V

120

A

0.68

V

Range

-55 to +150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

VS-10MQ100-M3

UNITS

Maximum DC reverse voltage

100

V

Maximum working peak reverse voltage

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current



See fig. 4



(0.013 mm thick copper pad area)

1.5

A



(0.013 mm thick copper pad area)

1

Maximum peak one cycle



See fig. 6

5 μs sine or 3 μs rect. pulse

Following any rated

load condition and with

120

10 ms sine or 6 ms rect. pulse

30

Non-repetitive avalanche energy

1.0

mJ

Repetitive avalanche current

Current decaying linearly to zero in 1 μs



0.5

A