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VS-10MQ100-M3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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VS-10MQ100-M3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 7 page VS-10MQ100-M3 www.vishay.com Vishay Semiconductors Revision: 20-Jan-15 1 Document Number: 93365 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Performance Schottky Rectifier, 1 A FEATURES • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Small foot print, surface mountable • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VS-10MQ100-M3 surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. PRODUCT SUMMARY Package DO-214AC (SMA) IF(AV) 1 A VR 100 V VF at IF 0.63 V IRM 1 mA at 125 °C TJ max. 150 °C Diode variation Single die EAS 1.0 mJ Cathode Anode DO-214AC (SMA) MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS IF(AV) Rectangular waveform 1 A VRRM 100 V IFSM tp = 5 μs sine 120 A VF 1.5 Apk, TJ = 125 °C 0.68 V TJ Range -55 to +150 °C VOLTAGE RATINGS PARAMETER SYMBOL VS-10MQ100-M3 UNITS Maximum DC reverse voltage VR 100 V Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current See fig. 4 IF(AV) 50 % duty cycle at TL = 126 °C, rectangular waveform On PC board 9 mm2 island (0.013 mm thick copper pad area) 1.5 A 50 % duty cycle at TL = 135 °C, rectangular waveform On PC board 9 mm2 island (0.013 mm thick copper pad area) 1 Maximum peak one cycle non-repetitive surge current, TJ = 25 °C See fig. 6 IFSM 5 μs sine or 3 μs rect. pulse Following any rated load condition and with rated VRRM applied 120 10 ms sine or 6 ms rect. pulse 30 Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 0.5 A, L = 8 mH 1.0 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 0.5 A |
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