RU3070L datasheet(2/8 Pages) RUICHIPS

Part #	RU3070L

Description	N-Channel Advanced Power MOSFET

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Manufacturer	RUICHIPS [Ruichips Semiconductor Co., Ltd]

Direct Link	http://www.ruichips.com

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RU3070L

Min.

Typ.

Max.

BVDSS

Drain-Source Breakdown Voltage

30

V

1

TJ=125°C

30

VGS(th)

Gate Threshold Voltage

1

3

V

IGSS

Gate Leakage Current

±100

nA

3.3

4.3

mΩ

5

6

mΩ

VSD

④

Diode Forward Voltage

1.2

V

trr

Reverse Recovery Time

35

ns

Qrr

Reverse Recovery Charge

23

nC

RG

Gate Resistance

1.9

Ω

Ciss

Input Capacitance

2200

Coss

Output Capacitance

370

Crss

Reverse Transfer Capacitance

250

td(ON)

Turn-on Delay Time

7

tr

Turn-on Rise Time

12

td(OFF)

Turn-off Delay Time

28

tf

Turn-off Fall Time

11

Qg

Total Gate Charge

32

Qgs

Gate-Source Charge

5

Qgd

Gate-Drain Charge

10

Notes:

Ruichips Semiconductor Co., Ltd

Rev. A– JUL., 2013

2

www.ruichips.com

VGS=0V, IDS=250µA

IDSS

Zero Gate Voltage Drain Current

VDS=30V, VGS=0V

µA

Symbol

Parameter

Test Condition

RU3070L

Unit

VDS=24V, VGS=10V,

IDS=70A

①Pulse width limited by safe operating area.

②Calculated continuous current based on maximum allowable junction temperature.

③Limited by T

Jmax, IAS =28A, VDD = 24V, RG = 50Ω , Starting TJ = 25°C.

④Pulse test;Pulse width≤300µs, duty cycle≤2%.

⑤Guaranteed by design, not subject to production testing.

Gate Charge Characteristics

⑤

nC

ns

RDS(ON)

④

Drain-Source On-state Resistance

VGS=10V, IDS=70A

Electrical Characteristics (T

C=25°C Unless Otherwise Noted)

VDD=15V, IDS=70A,

VGEN=10V, RG=5Ω

ISD=70A, VGS=0V

ISD=70A, dlSD/dt=100A/µs

VGS=0V,VDS=0V,F=1MHz

VGS=0V,

VDS=15V,

Frequency=1.0MHz

pF

Dynamic Characteristics

⑤

VGS=±20V, VDS=0V

VGS=4.5V, IDS=56A

Diode Characteristics

VDS=VGS, IDS=250µA

Static Characteristics

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