MBR1035CT_14 datasheet(1/4 Pages) TSC

Part #	MBR1035CT

Description	Dual Common Cathode Schottky Rectifier

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Manufacturer	TSC [Taiwan Semiconductor Company, Ltd]

Direct Link	http://www.taiwansemi.com

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CREAT BY ART

- Low power loss, high efficiency

- Guardring for overvoltage protection

- High surge current capability

- Halogen-free according to IEC 61249-2-21 definition

Molding compound, UL flammability classification rating 94V-0

Base P/N with suffix "G" on packing code - halogen-free

Base P/N with prefix "H" on packing code - AEC-Q101 qualified

Terminal:

Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test,

with prefix "H" on packing code meet JESD 201 class 2 whisker test

VRRM

35

45

50

60

90

100

150

200

V

VRMS

24

31

35

42

63

70

105

140

V

VDC

35

45

50

60

90

100

150

200

V

IF(AV)

A

IRRM

A

dV/dt

V/μs

RθJC

OC/W

TJ

OC

TSTG

OC

Document Number: DS_D1308060

Version: K13

MBR1035CT thru MBR10200CT

Taiwan Semiconductor

Dual Common Cathode Schottky Rectifier

FEATURES

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

TO-220AB

MECHANICAL DATA

Case:

TO-220AB

Polarity:

As marked

Mounting torque:

5 in-lbs maximum

Weight:

1.88 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)

PARAMETER

SYMBOL

MBR

1035

CT

MBR

1045

CT

MBR

1050

CT

MBR

1060

CT

MBR

1090

CT

MBR

10100

CT

MBR

10150

CT

MBR

10200

CT

UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

10.5

Maximum DC blocking voltage

Maximum average forward rectified current

10

Peak repetitive forward current

(Rated VR, Square Wave, 20KHz)

IFRM

10

A

0.80

V

0.57

0.65

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

IFSM

120

A

Peak repetitive reverse surge current (Note 1)

0.1

0.70

0.80

0.85

0.88

0.90

0.95

0.98

0.67

0.85

0.88

Maximum instantaneous forward voltage (Note 2)

IF= 5 A, TJ=25℃

IF= 5 A, TJ=125℃

IF= 10 A, TJ=25℃

IF= 10 A, TJ=125℃

VF

Operating junction temperature range

- 55 to +150

0.75

0.78

mA

15

10

Voltage rate of change (Rated VR)

10000

0.75

Storage temperature range

- 55 to +150

Maximum reverse current @ rated VR TJ=25 ℃

TJ=125 ℃

IR

Note 1: tp = 2.0 μs, 1.0KHz

Note 2: Pulse test with PW=300μs, 1% duty cycle

25

1.5

Typical thermal resistance

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MBR1035CT Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

MBR1035CT Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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