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RU40120S Datasheet(PDF) 2 Page - Ruichips Semiconductor Co., Ltd |
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RU40120S Datasheet(HTML) 2 Page - Ruichips Semiconductor Co., Ltd |
2 / 8 page RU40120S Min. Typ. Max. BVDSS Drain-Source Breakdown Voltage 40 V 1 TJ=125°C 30 VGS(th) Gate Threshold Voltage 2 4 V IGSS Gate Leakage Current ±100 nA RDS(ON) ④ Drain-Source On-state Resistance 3.5 4.5 mΩ VSD ④ Diode Forward Voltage 1.2 V trr Reverse Recovery Time 33 ns Qrr Reverse Recovery Charge 30 nC RG Gate Resistance 1.8 Ω Ciss Input Capacitance 3700 Coss Output Capacitance 680 Crss Reverse Transfer Capacitance 345 td(ON) Turn-on Delay Time 36 tr Turn-on Rise Time 205 td(OFF) Turn-off Delay Time 85 tf Turn-off Fall Time 45 Qg Total Gate Charge 90 Qgs Gate-Source Charge 32 Qgd Gate-Drain Charge 37 Notes: Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2013 2 www.ruichips.com Electrical Characteristics (T C=25°C Unless Otherwise Noted) VDD=20V, IDS=60A, VGEN=10V,RG=4.7Ω VDS=32V, VGS=10V, IDS=60A ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. The package limitation current is 75A. ③Limited by T Jmax, IAS =40A, VDD = 32V, RG = 50Ω , Starting TJ = 25°C. ④Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing. Gate Charge Characteristics ⑤ nC ns ISD=60A, VGS=0V ISD=60A, dlSD/dt=100A/µs VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=20V, Frequency=1.0MHz pF Dynamic Characteristics ⑤ VGS=±20V, VDS=0V VGS=10V, IDS=60A Diode Characteristics VDS=VGS, IDS=250µA Static Characteristics Symbol Parameter Test Condition RU40120S Unit VGS=0V, IDS=250µA IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V µA |
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