RU40120S

Min.

Typ.

Max.

Drain-Source Breakdown Voltage

40

V

1

30

Gate Threshold Voltage

2

4

V

Gate Leakage Current

±100

nA

④

Drain-Source On-state Resistance

3.5

4.5

mΩ

④

Diode Forward Voltage

1.2

V

Reverse Recovery Time

33

ns

Reverse Recovery Charge

30

nC

Gate Resistance

1.8

Ω

Input Capacitance

3700

Output Capacitance

680

Reverse Transfer Capacitance

345

Turn-on Delay Time

36

Turn-on Rise Time

205

Turn-off Delay Time

85

Turn-off Fall Time

45

Total Gate Charge

90

Gate-Source Charge

32

Gate-Drain Charge

37

Notes:

Ruichips Semiconductor Co., Ltd

Rev. A– JUL., 2013

2

www.ruichips.com

①Pulse width limited by safe operating area.

②Calculated continuous current based on maximum allowable junction temperature. The package

limitation current is 75A.

③Limited by T

④Pulse test;Pulse width≤300µs, duty cycle≤2%.

⑤Guaranteed by design, not subject to production testing.

Gate Charge Characteristics

⑤

nC

ns

Frequency=1.0MHz

pF

Dynamic Characteristics

⑤

Diode Characteristics

Static Characteristics

Symbol

Parameter

Test Condition

RU40120S

Unit

Zero Gate Voltage Drain Current

µA