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MBR1060CT-YC0G Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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MBR1060CT-YC0G Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 4 page  CREAT BY ART - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Halogen-free according to IEC 61249-2-21 definition Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test VRRM 45 60 100 150 200 V VRMS 31 42 70 105 140 V VDC 45 60 100 150 200 V IF(AV) A IRRM 1A 0.70 0.80 0.85 0.57 0.65 0.75 0.80 0.90 0.95 0.67 0.75 0.85 15 10 2 dV/dt V/μs RθJC OC/W TJ OC TSTG OC Document Number: DS_D1405041 Version: A14 MBR10 200CT Marking code MBR10 45CT MBR10 60CT MBR10 100CT MBR10 150CT Storage temperature range - 55 to +150 Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ IR Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle 5 1.5 Typical thermal resistance Operating junction temperature range - 55 to +150 0.78 mA Voltage rate of change (Rated VR) 10000 0.98 0.88 Maximum instantaneous forward voltage (Note 2) IF= 5 A, TJ=25℃ IF= 5 A, TJ=125℃ IF= 10 A, TJ=25℃ IF= 10 A, TJ=125℃ VF Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 120 A Peak repetitive reverse surge current (Note 1) 0.1 0.88 IFRM 10 A V MBR 10200 CT-Y UNIT Maximum repetitive peak reverse voltage Maximum RMS voltage 0.5 Maximum DC blocking voltage Maximum average forward rectified current 10 Peak repetitive forward current (Rated VR, Square wave, 20KHz) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL MBR 1045 CT-Y MBR 1060 CT-Y MBR 10100 CT-Y MBR 10150 CT-Y MECHANICAL DATA Case: TO-220AB Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.88 g (approximately) TO-220AB MBR1045CT-Y thru MBR10200CT-Y Dual Common Cathode Schottky Rectifier FEATURES - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Taiwan Semiconductor |
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