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M2V64S20BTP-8 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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M2V64S20BTP-8 Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
1 / 52 page Apr. '99 MITSUBISHI LSIs MITSUBISHI ELECTRIC SDRAM (Rev.1.2) M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 2097152-WORD x 8-BIT) M2V64S40BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 1048576-WORD x 16-BIT) 64M bit Synchronous DRAM 1 DESCRIPTION The M2V64S20BTP is organized as 4-bank x 4194304-word x 4-bit, M2V64S30BTP is organized as 4-bank x 2097152-word x 8-bit, and M2V64S40BTP is organized as 4-bank x 1048576-word x 16-bit Synchronous DRAM with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V64S20BTP, M2V64S30BTP, M2V64S40BTP achieve very high speed data rate up to 125MHz, and are suitable for main memory or graphic memory in computer systems. FEATURES - Single 3.3v ± 0.3v power supply - Fully synchronous operation referenced to clock rising edge - 4 bank operation controlled by BA0, BA1 (Bank Address) - /CAS latency- 2/3 (programmable) - Burst length- 1/2/4/8/Full Page (programmable) - Burst type- sequential / interleave (programmable) - Column access - random - Burst Write / Single Write (programmable) - Auto refresh and Self refresh - 4096 refresh cycles /64ms - Column address A0-A9 (x4), A0-A8(x8), A0-A7(x16) - LVTTL Interface - 400-mil, 54-pin Thin Small Outline Package (TSOP II) with 0.8mm lead pitch Max. Frequency CLK Access Time M2V64S20BTP M2V64S30BTP M2V64S40BTP 125MHz 6ns - Clock frequency 125MHz /100MHz 100MHz(CL3) 6ns -8A 100MHz(CL2) 6ns - Auto precharge / All bank precharge controlled by A10 -7, -7L -8, -8L -10, -10L 100MHz 8ns |
Similar Part No. - M2V64S20BTP-8 |
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Similar Description - M2V64S20BTP-8 |
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