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MI3035S Datasheet(PDF) 1 Page - Vishay Siliconix |
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MI3035S Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 6 page M(B,I)3035S, M(B,I)3045S www.vishay.com Vishay General Semiconductor Revision: 15-Oct-12 1 Document Number: 88952 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s per JESD22-B106 (for TO-220AB and TO-262AA package) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, and polarity protection application. MECHANICAL DATA Case: TO-220AB, TO-263AB, and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 30 A VRRM 35 V, 45 V IFSM 200 A VF at IF = 30 A 0.61 V TJ max. 150 °C 1 K 2 3 TO-263AB NC A K TO-262AA TO-220AB 1 2 3 M30xxS PIN 1 PIN 2 CASE PIN 3 MI30xxS MB30xxS HEATSINK NC A K K PIN 1 PIN 3 PIN 2 MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL M(B,I)3035S M(B,I)3045S UNIT Maximum repetitive peak reverse voltage VRRM 35 45 V Maximum average forward rectified current (Fig.1) IF(AV) 30 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 200 A Peak repetitive reverse current at tp = 2.0 µs, 1 kHz IRRM 2.0 Voltage rate of change (rated VR) dV/dt 10 000 V/μs Operating junction and storage temperature range TJ - 65 to + 150 °C TSTG - 65 to + 175 |
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