MBR(F,B)20H90CT & MBR(F,B)20H100CT

Vishay General Semiconductor

Document Number: 88673

Revision: 08-Nov-07

www.vishay.com

1

Dual Common-Cathode High-Voltage Schottky Rectifier

High Barrier Technology for Improved High Temperature Performance

FEATURES

• Guardring for overvoltage protection

• Lower power losses, high efficiency

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• High frequency operation

• Meets MSL level 1, per J-STD-020C, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder dip 260 °C, 40 s (for TO-220AB and

ITO-220AB package)

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching

mode power supplies, freewheeling diodes, dc-to-dc

converters or polarity protection application.

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-263AB

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

PRIMARY CHARACTERISTICS

10 A x 2

90 V, 100 V

250 A

4.5 µA

0.64 V

175 °C

TO-263AB

CASE

PIN 2

PIN 1

PIN 3

TO-220AB

MBR20H90CT

MBR20H100CT

ITO-220AB

MBRF20H90CT

MBRF20H100CT

MBRB20H90CT

MBRB20H100CT

PIN 1

PIN 2

K

HEATSINK

1

2

3

1

2

K

PIN 2

PIN 1

PIN 3

1

2

3

PARAMETER

SYMBOL

MBR20H90CT

MBR20H100CT

UNIT

Maximum repetitive peak reverse voltage

90

100

V

Working peak reverse voltage

90

100

V

Maximum DC blocking voltage

90

100

V

Maximum average forward rectified current

total device

per diode

20

10

A

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

250

A

1.0

A

dV/dt

10000

V/µs

Operating junction and storage temperature range

- 65 to + 175

°C

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

1500

V