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MBR20H90CT Datasheet(PDF) 1 Page - Vishay Siliconix |
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MBR20H90CT Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 6 page MBR(F,B)20H90CT & MBR(F,B)20H100CT Vishay General Semiconductor Document Number: 88673 Revision: 08-Nov-07 www.vishay.com 1 Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020C, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB and ITO-220AB package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 10 A x 2 VRRM 90 V, 100 V IFSM 250 A IR 4.5 µA VF 0.64 V TJ max. 175 °C TO-263AB CASE PIN 2 PIN 1 PIN 3 TO-220AB MBR20H90CT MBR20H100CT ITO-220AB MBRF20H90CT MBRF20H100CT MBRB20H90CT MBRB20H100CT PIN 1 PIN 2 K HEATSINK 1 2 3 1 2 K PIN 2 PIN 1 PIN 3 1 2 3 MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR20H90CT MBR20H100CT UNIT Maximum repetitive peak reverse voltage VRRM 90 100 V Working peak reverse voltage VRWM 90 100 V Maximum DC blocking voltage VDC 90 100 V Maximum average forward rectified current total device per diode IF(AV) 20 10 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 250 A Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz IRRM 1.0 A Voltage rate of change (rated VR) dV/dt 10000 V/µs Operating junction and storage temperature range TJ, TSTG - 65 to + 175 °C Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min VAC 1500 V |
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