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MBR20H50CT Datasheet(PDF) 2 Page - Vishay Siliconix |
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MBR20H50CT Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 6 page MBR20HxxCT, MBRF20HxxCT, MBRB20HxxCT www.vishay.com Vishay General Semiconductor Revision: 12-Jun-13 2 Document Number: 88787 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms Note (1) AEC-Q101 qualified MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR20H35CT MBR20H45CT MBR20H50CT MBR20H60CT UNIT Maximum repetitive peak reverse voltage VRRM 35 45 50 60 V Working peak reverse voltage VRWM 35 45 50 60 Maximum DC blocking voltage VDC 35 45 50 60 Maximum average forward rectified current (fig. 1) total device IF(AV) 20 A per diode 10 Non-repetitive avalanche energy per diode at 25 °C, IAS = 4 A, L = 10 mH EAS 80 mJ Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 150 A Peak repetitive reverse surge current per diode at tp = 2.0 μs, 1 kHz IRRM 1.0 0.5 Peak non-repetitive reverse energy (8/20 μs waveform) ERSM 20 10 mJ Electrostatic discharge capacitor voltage Human body model: C = 100 pF, R = 1.5 k VC 25 kV Voltage rate of change (rated VR) dV/dt 10 000 V/μs Operating junction and storage temperature range TJ, TSTG - 65 to 175 °C Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min VAC 1500 V ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MBR20H35CT MBR20H45CT MBR20H50CT MBR20H60CT UNIT TYP. MAX. TYP. MAX. Maximum instantaneous forward voltage per diode VF (1) IF = 10 A TC = 25 °C - 0.63 - 0.71 V IF = 10 A TC = 125 °C 0.49 0.55 0.57 0.61 IF = 20 A TC = 25 °C - 0.75 - 0.85 IF = 20 A TC = 125 °C 0.62 0.68 0.68 0.71 Maximum reverse current per diode IR (2) Rated VR TJ = 25 °C - 100 - 100 μA TJ = 125 °C 4.0 12 2.0 12 mA THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR MBRF MBRB UNIT Typical resistance, junction to case per diode RJC 2.0 4.0 2.0 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB MBR20H45CT-E3/45 1.85 45 50/tube Tube ITO-220AB MBRF20H45CT-E3/45 1.99 45 50/tube Tube TO-263AB MBRB20H45CT-E3/45 1.35 45 50/tube Tube TO-263AB MBRB20H45CT-E3/81 1.35 81 800/reel Tape and reel TO-220AB MBR20H45CTHE3/45 (1) 1.85 45 50/tube Tube ITO-220AB MBRF20H45CTHE3/45 (1) 1.99 45 50/tube Tube TO-263AB MBRB20H45CTHE3/45 (1) 1.35 45 50/tube Tube TO-263AB MBRB20H45CTHE3/81 (1) 1.35 81 800/reel Tape and reel |
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