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LT1336CN Datasheet(PDF) 3 Page - Linear Technology

Part # LT1336CN
Description  Half-Bridge N-Channel Power MOSFET Driver with Boost Regulator
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Manufacturer  LINER [Linear Technology]
Direct Link  http://www.linear.com
Logo LINER - Linear Technology

LT1336CN Datasheet(HTML) 3 Page - Linear Technology

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LT1336
VIS
ISENSE Peak Current Threshold
VTSOURCE = 60V, VBOOST = 68V, V + – VISENSE
310
480
650
mV
VISHYS
ISENSE Hysteresis
VTSOURCE = 60V, VBOOST = 68V
25
55
85
mV
VSAT
Switch Saturation Voltage
VISENSE = V
+, VBOOST – VTSOURCE = 9V,
q
0.85
1.2
V
ISW = 100mA
VBOUT
VBOOST Regulated Output
VTSOURCE = 40V, VINTOP = VINBOTTOM = 0.8V,
10
10.6
11.2
V
IBOOST = 10mA, VBOOST – VTSOURCE
tr
Top Gate Rise Time
VINTOP (+) Transition, VINBOTTOM = 0.8V,
q
130
200
ns
Measured at VTGATE DR – VTSOURCE (Note 4)
Bottom Gate Rise Time
VINBOTTOM (+) Transition, VINTOP = 0.8V,
q
90
200
ns
Measured at VBGATE DR (Note 4)
tf
Top Gate Fall Time
VINTOP (–) Transition, VINBOTTOM = 0.8V,
q
60
140
ns
Measured at VTGATE DR – VTSOURCE (Note 4)
Bottom Gate Fall Time
VINBOTTOM (–) Transition, VINTOP = 0.8V,
q
60
140
ns
Measured at VBGATE DR (Note 4)
tD1
Top Gate Turn-On Delay
VINTOP (+) Transition, VINBOTTOM = 0.8V,
q
250
500
ns
Measured at VTGATE DR – VTSOURCE (Note 4)
Bottom Gate Turn-On Delay
VINBOTTOM (+) Transition, VINTOP = 0.8V,
q
200
400
ns
Measured at VBGATE DR (Note 4)
tD2
Top Gate Turn-Off Delay
VINTOP (–) Transition, VINBOTTOM = 0.8V,
q
300
600
ns
Measured at VTGATE DR – VTSOURCE (Note 4)
Bottom Gate Turn-Off Delay
VINBOTTOM (–) Transition, VINTOP = 0.8V,
q
200
400
ns
Measured at VBGATE DR (Note 4)
tD3
Top Gate Lockout Delay
VINBOTTOM (+) Transition, VINTOP = 2V,
q
300
600
ns
Measured at VTGATE DR – VTSOURCE (Note 4)
Bottom Gate Lockout Delay
VINTOP (+) Transition, VINBOTTOM = 2V,
q
250
500
ns
Measured at VBGATE DR (Note 4)
tD4
Top Gate Release Delay
VINBOTTOM (–) Transition, VINTOP = 2V,
q
250
500
ns
Measured at VTGATE DR – VTSOURCE (Note 4)
Bottom Gate Release Delay
VINTOP (–) Transition, VINBOTTOM = 2V,
q
200
400
ns
Measured at VBGATE DR (Note 4)
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
ELECTRICAL CHARACTERISTICS Test Circuit, T
A = 25°C, V
+ = VBOOST = 12V, VTSOURCE = 0V, and Pins 1, 16
open. Gate Feedback pins connected to Gate Drive pins unless otherwise specified.
The q denotes specifications which apply over the full operating
temperature range.
Note 1: TJ is calculated from the ambient temperature TA and power
dissipation PD according to the following formulas:
LT1336CN/LT1336IN: TJ = TA + (PD)(70°C/W)
LT1336CS/LT1336IS: TJ = TA + (PD)(110°C/ W)
Note 2: Dynamic supply current is higher due to the gate charge being
delivered at the switching frequency. See Typical Performance
Characteristics and Applications Information sections.
Note 3: Pins 1 and 16 connected to each end of the inductor. Booster is
free running.
Note 4: See Timing Diagram. Gate rise times are measured from 2V to 10V
and fall times are measured from 10V to 2V. Delay times are measured
from the input transition to when the gate voltage has risen to 2V or
decreased to 10V.


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