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SF18G Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # SF18G
Description  Glass Passivated Super Fast Rectifiers
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

SF18G Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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CREAT BY ART
- High efficiency, low VF
- High current capability
- High reliability
- Low power loss
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
VRRM
50
100
150
200
300
400
500
600
V
VRMS
35
70
105
140
210
280
350
420
V
VDC
50
100
150
200
300
400
500
600
V
IF(AV)
A
Trr
ns
Cj
pF
TJ
OC
TSTG
OC
Document Number: DS_D1401007
Version: F14
μA
SF11G thru SF18G
Taiwan Semiconductor
Glass Passivated Super Fast Rectifiers
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case:
DO-204AL (DO-41)
DO-204AL (DO-41)
Weight:
0.35 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
SF
11G
SF
12G
SF
13G
SF
14G
SF
15G
SF
16G
SF
17G
V
SF
18G
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
1
35
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
A
Maximum instantaneous forward voltage (Note 1)
@ 1 A
VF
0.95
1.3
1.7
Typical junction capacitance (Note 3)
20
10
Operating junction temperature range
- 55 to +150
Maximum reverse current @ rated VR TJ=25 ℃
TJ=125 ℃
IR
5
100
Maximum reverse recovery time (Note 2)
Storage temperature range
- 55 to +150
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Typical thermal resistance
RθJL
RθJA
20
OC/W
80


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