VS-175BGQ030

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Vishay Semiconductors

Revision: 04-Jul-11

2

Document Number: 94583

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

TYP.

MAX.

UNITS

Forward voltage drop

100 A

0.47

0.49

V

175 A

0.55

0.59

100 A

0.36

0.39

175 A

0.47

0.52

Reverse leakage current

160

220

mA

1400

2000

1.3

4.5

450

650

Maximum junction capacitance

8500

pF

Typical series inductance

Measured from tab to mounting plane

3.5

nH

Maximum voltage rate of change

dV/dt

10 000

V/μs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and storage

temperature range

- 55 to 150

°C

Maximum thermal resistance,

junction to case

DC operation

0.25

°C/W

Typical thermal resistance,

case to heatsink

Mounting surface, smooth and greased

0.20

Approximate weight

5g

0.18

oz.

Mounting torque

minimum

1.2 (10)

N · m

(lbf · in)

maximum

2.4 (20)

Marking device

175BGQ045