DXTP03200BP5_15 datasheet(4/7 Pages) DIODES

Part #	DXTP03200BP5

Description	200V PNP HIGH VOLTAGE TRANSISTOR PowerDI짰5

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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4 / 7 page

DXTP03200BP5

Document number: DS32068 Rev. 2 - 2

4 of 7

www.diodes.com

March 2010

DXTP03200BP5

PowerDI is a registered trademark of Diodes Incorporated.

A Product Line of

Diodes Incorporated

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

V(BR)CBO

-220

-245

−

V

IC = -100μA

Collector-Emitter Breakdown Voltage (Note 7)

V(BR)CEO

-200

-225

−

V

IC = -10mA

Emitter-Base Breakdown Voltage

V(BR)EBO

-7

-8.4

−

V

IE = -100μA

Collector Cutoff Current

ICBO

−

<1

−

-50

-0.5

nA

μA

VCB = -200V

VCB = -200V, TA = 100 °C

Emitter Cutoff Current

IEBO

−

<1

-10

nA

VEB = -6V

Collector-Emitter Saturation Voltage (Note 7)

VCE(sat)

−

-37

-130

-135

-180

-50

-155

-160

-275

mV

IC = -0.1A, IB = -10mA

IC = -0.5A, IB = -25mA

IC = -1A, IB = -100mA

IC = -2A, IB = -400mA

Base-Emitter Saturation Voltage (Note 7)

VBE(sat)

−

-955

-1100

mV

IC = -2A, IB = -400mA

Base-Emitter Turn-On Voltage (Note 7)

VBE(on)

−

-860

-1000

mV

VCE = -5V, IC = -2A

DC Current Gain (Note 7)

hFE

100

20

−

195

170

50

5

−

300

−

VCE = -5V, IC = -10mA

VCE = -5V, IC = -1A

VCE = -5V, IC = -2A

VCE = -5V, IC = -5A

Transition Frequency

fT

−

105

−

MHz

VCE = -10V, IC = -100mA,

f = 50MHz

Output Capacitance

Cobo

−

31

−

pF

VCB = -10V, f = 1MHz

Delay Time

td

−

21

−

ns

VCC = -50V, IC = -1A,

IB1 = -IB2 = -100mA

Rise Time

tr

−

18

−

ns

Storage Time

ts

−

680

−

ns

Fall Time

tf

−

75

−

ns

Notes:

7. Pulse Test: Pulse width

≤300μs. Duty cycle ≤2.0%.

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