MBR30H90PT datasheet(2/5 Pages) VISHAY

Part #	MBR30H90PT

Description	Dual Common Cathode High Voltage Schottky Rectifier

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Manufacturer	VISHAY [Vishay Siliconix]

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MBR30H90PT, MBR30H100PT

www.vishay.com

Vishay General Semiconductor

Revision: 09-Aug-13

2

Document Number: 88678

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Forward Derating Curve

Fig. 2 - Typical Instantaneous Forward Characteristics Per Diode

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MBR30H90PT

MBR30H100PT

UNIT

Maximum instantaneous forward voltage



per diode

VF (1)

IF = 15 A

TJ = 25 °C

0.82

V

IF = 15 A

TJ = 125 °C

0.67

IF = 30 A

TJ = 25 °C

0.93

IF = 30 A

TJ = 125 °C

0.80

Maximum instantaneous reverse current at

rated DC blocking voltage per diode

IR (1)

TJ = 25 °C

5.0

μA

TJ = 125 °C

6.0

mA

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

MBR30H90PT

MBR30H100PT

UNIT

Thermal resistance, junction to case per diode

RJC

1.6

°C/W

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

TO-247AD

MBR30H100PT-E3/4W

6.13

45

30/tube

Tube

0

5

10

15

20

25

30

35

75

50

25

100

125

150

175

Case Temperature (°C)

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

100

10

0.1

0.01

1

Instantaneous Forward Voltage (V)

T

J = 100 °C

T

J = 150 °C

T

J = 125 °C

T

J = 175 °C

T

J = 25 °C

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