VS-22RIA Series

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Vishay Semiconductors

Revision: 11-Mar-14

3

Document Number: 93700

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

TRIGGERING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum peak gate power

8.0

W

Maximum average gate power

2.0

Maximum peak positive gate current

1.5

A

Maximum peak negative gate voltage

10

V

DC gate current required to trigger

Maximum required gate trigger



current/voltage are the lowest

value which will trigger all units



6 V anode to cathode applied

90

mA

60

35

DC gate voltage required to trigger

3.0

V

2.0

1.0

DC gate current not to trigger

2.0

mA

DC gate voltage not to trigger

Maximum gate current/voltage



not to trigger is the maximum



value which will not trigger any



cathode applied

0.2

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum operating junction



and storage temperature range

-65 to 125

°C

Maximum thermal resistance,



junction to case

DC operation

0.86

K/W

Maximum thermal resistance,



case to heatsink

Mounting surface, smooth, flat and greased

0.35

TO NUT

TO DEVICE

Mounting torque

Lubricated threads



(Non-lubricated threads)

20 (27.5)

25

lbf

in

0.23 (0.32)

0.29

kgf · m

2.3 (3.1)

2.8

N · m

Approximate weight

14

g

0.49

oz.

Case style

See dimensions - link at the end of datasheet

TO-208AA (TO-48)

R

CONDUCTION ANGLE

SINUSOIDAL CONDUCTION

RECTANGULAR CONDUCTION

TEST CONDITIONS

UNITS

180°

0.21

0.15

K/W

120°

0.25

0.25

90°

0.31

0.34

60°

0.45

0.47

30°

0.76

0.76