VS-25TTS..PbF Series, VS-25TTS..-M3 Series

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Vishay Semiconductors

Revision: 26-Jul-13

4

Document Number: 94385

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 5 - Maximum Non-Repetitive Surge Current

Fig. 6 - Maximum Non-Repetitive Surge Current

Fig. 7 - On-State Voltage Drop Characteristics

Fig. 8 - Gate Characteristics

120

1

10

100

200

240

280

300

Number of Equal Amplitude Half Cycle

Current Pulses (N)

Initial T

at 60 Hz 0.0083 s

at 50 Hz 0.0100 s

At any rated load condition and with

rated V

VS-25TTS.. Series

260

220

140

160

180

150

100

0.01

0.1

1

200

250

300

350

Pulse Train Duration (s)

Maximum non-repetitive surge current

versus pulse train duration. Control

of conduction may not be maintained.

Initial T

No voltage reapplied

Rated V

VS-25TTS.. Series

10

100

1

10

012345

1000

Instantaneous On-State Voltage (V)

25TTS.. Series

T

T

0.1

1

10

100

0.001

Instantaneous Gate Current (A)

0.01

0.1

1

10

100

(1) P

(2) P

(3) P

(4) P

(b)

(a)

Rectangular gate pulse

a) Recommended load line for

rated dI/dt: 10 V, 20

Ω

t

b) Recommended load line for

≤ 30 % rated dI/dt: 10 V, 65 Ω

t

V

GD

I

GD

Frequency limited by P

G(AV)

(1)

(2)

(3)

(4)

25TTS.. Series