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VS-25TTS08PBF Datasheet(PDF) 4 Page - Vishay Siliconix |
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VS-25TTS08PBF Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 7 page VS-25TTS..PbF Series, VS-25TTS..-M3 Series www.vishay.com Vishay Semiconductors Revision: 26-Jul-13 4 Document Number: 94385 For technical questions within your region: diodes-tech@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 7 - On-State Voltage Drop Characteristics Fig. 8 - Gate Characteristics 120 1 10 100 200 240 280 300 Number of Equal Amplitude Half Cycle Current Pulses (N) Initial T J = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s At any rated load condition and with rated V RRM applied following surge VS-25TTS.. Series 260 220 140 160 180 150 100 0.01 0.1 1 200 250 300 350 Pulse Train Duration (s) Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial T J = 150 °C No voltage reapplied Rated V RRM reapplied VS-25TTS.. Series 10 100 1 10 012345 1000 Instantaneous On-State Voltage (V) 25TTS.. Series T J = 25 °C T J = 125 °C 0.1 1 10 100 0.001 Instantaneous Gate Current (A) 0.01 0.1 1 10 100 (1) P GM = 40 W, tp = 1 ms (2) P GM = 20 W, tp = 2 ms (3) P GM = 8 W, tp = 5 ms (4) P GM = 4 W, tp = 10 ms (b) (a) Rectangular gate pulse a) Recommended load line for rated dI/dt: 10 V, 20 Ω t r = 0.5 µs, tp ≥ 6 µs b) Recommended load line for ≤ 30 % rated dI/dt: 10 V, 65 Ω t r = 1 µs, tp ≥ 6 µs V GD I GD Frequency limited by P G(AV) (1) (2) (3) (4) 25TTS.. Series |
Similar Part No. - VS-25TTS08PBF_15 |
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