VS-30TPS08PBF datasheet(2/10 Pages) VISHAY

Part #	VS-30TPS08PBF

Description	Thyristor High Voltage, Phase Control SCR

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Manufacturer	VISHAY [Vishay Siliconix]

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VS-30TPS..PbF Series, VS-30TPS..-M3 Series

www.vishay.com

Vishay Semiconductors

Revision: 06-Feb-14

2

Document Number: 94386

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average on-state current

IT(AV)

TC = 95 °C, 180° conduction half sine wave

20

A

Maximum RMS on-state current

IRMS

30

Maximum peak, one-cycle



non-repetitive surge current

ITSM

10 ms sine pulse, rated VRRM applied

250

10 ms sine pulse, no voltage reapplied

300

Maximum I2t for fusing

I2t

10 ms sine pulse, rated VRRM applied

310

A2s

10 ms sine pulse, no voltage reapplied

442

Maximum I2

t for fusing

I2

t

t = 0.1 to 10 ms, no voltage reapplied

4420

A2

s

Maximum on-state voltage drop

VTM

20 A, TJ = 25 °C

1.3

V

On-state slope resistance

rt

TJ = 125 °C

12

m



Threshold voltage

VT(TO)

1.0

V

Maximum reverse and direct leakage current

IRM/IDM

TJ = 25 °C

VR = Rated VRRM/VDRM

0.5

mA

TJ = 125 °C

10

Maximum holding current

IH

Anode supply = 6 V, resistive load, initial IT = 1 A, TJ = 25 °C

150

Maximum latching current

IL

Anode supply = 6 V, resistive load

, TJ = 25 °C

200

Maximum rate of rise of off-state voltage

dV/dt

TJ = TJ maximum, linear to 80 % VDRM, Rg-k = Open

500

V/µs

Maximum rate of rise of turned-on current

dI/dt

150

A/µs

TRIGGERING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum peak gate power

PGM

8.0

W

Maximum average gate power

PG(AV)

2.0

Maximum peak positive gate current

+ IGM

1.5

A

Maximum peak negative gate voltage

- VGM

10

V

Maximum required DC gate current to trigger

IGT

Anode supply = 6 V, resistive load, TJ = - 10 °C

60

mA

Anode supply = 6 V, resistive load, TJ = 25 °C

45

Anode supply = 6 V, resistive load, TJ = 125 °C

20

Maximum required DC gate



voltage to trigger

VGT

Anode supply = 6 V, resistive load, TJ = - 10 °C

2.5

V

Anode supply = 6 V, resistive load, TJ = 25 °C

2.0

Anode supply = 6 V, resistive load, TJ = 125 °C

1.0

Maximum DC gate voltage not to trigger

VGD

TJ = 125 °C, VDRM = Rated value

0.25

Maximum DC gate current not to trigger

IGD

2.0

mA

SWITCHING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Typical turn-on time

tgt

TJ = 25 °C

0.9

µs

Typical reverse recovery time

trr

TJ = 125 °C

4

Typical turn-off time

tq

110

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