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VS-50RIA20 Datasheet(PDF) 5 Page - Vishay Siliconix |
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VS-50RIA20 Datasheet(HTML) 5 Page - Vishay Siliconix |
5 / 9 page VS-50RIA Series www.vishay.com Vishay Semiconductors Revision: 11-Mar-14 5 Document Number: 93711 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 7 - Forward Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristics Fig. 9 - Gate Characteristics 1 10 100 1000 0.5 1 1.5 2 2.5 3 3.5 4 4.5 T = 25°C J Instantaneous On-state Voltage (V) T = 125°C J 50RIA Series 0.01 0.1 1 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Steady State Value R = 0.35 K/W thJ-hs 50RIA Series 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 VGD IGD (b) (a) (1) (2) Instantaneous Gate Current (A) a) Recommended load line for b) Recommended load line for tr<=1 µs Rectangular gate pulse rated di/dt : 20V, 30 ohms; tr<=0.5 µs <=30% rated di/dt : 20V, 65 ohms (1) PGM = 10W, tp = 5ms (2) PGM = 20W, tp = 2.5ms (3) PGM = 50W, tp = 1ms (4) PGM = 100W, tp = 500µs (3) (4) 50RIA Series Frequency Limited by PG(AV) |
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